In order to suppress the negative effect on organic light emitting diodes (OLED s) during the atomic layer deposition (ALD) encapsulation process,barrier layers are fabr icated before and after ALD deposition film to prevent the corrosion of precursor and water vapor.In this work,we developed a n o rganic/ i norganic/ o rganic (OIO) h ybrid structure to over come the limitations of ALD oxide film. The spin - coating o rganic photor esist film play s the role as the primary barrier . It prevent s reac t ant precursor contact ing with the electrode and organic layer , and bulk water in the air pil ing up on the surface of inorganic thin film.The inorganic film deposited by ALD technology bet ween the organic films is used to improve the barrier property of OIO hybrid str ucture.The microscope,scan electron microscope (SEM) and atomic force microscope (AFM) ar e used to investigate the film structure and surface properties.The water vapor trans mission rate (WVTR) is measured by calcium testing system.The images of SEM and AFM show a smooth and dense OIO three-layer hybrid film.Compared with single inorganic film,the WVTR of OIO hybrid film is from 4.0×10－ 1 g/(m ^2day) to 9.0× 10－ 5 g/(m 2day) , which is increased effectively.T his technology would be expected as a useful method for protecting OLED.