To meet the demands of high efficient silicon thin film solar cells,h ydrogenated Mg and Ga co-doped ZnO (HMGZO) films have been deposited by pulsed DC magnetron sp uttering at different substrate temperatures.The structural,morphological,optical,and electrical p roperties of HMGZO films are investigated in detail.Experimental results show that all the HMGZO films present a polycrystalline hexagonal wurtzite phase with a c-axis preferred orientation. With increasing the substrate temperature,the novel cone-like surface morphology of HMGZO film s becomes denser,and the content of Mg atoms in HMGZO films increases.The optic al transmittances of all the HMGZO thin films are higher than 80% in the visible wavelength range from 380nm to 800nm.The incorporation of Mg atoms and Burstein-Moss (BM) band-filling determined by carrier concentrations together contribute to the band-gap (E_g) broadening p h enomenon,and the E_g of the HMGZO films reaches 3.75eV.The HMGZO film deposited at 280℃ exhibits a low sheet resi stance of 4.91Ω,low resistivity of 7.63×10－4 Ω·cm and high ΦTC value of 0.022Ω－1.