Ohmic contact resistance between InAs/InP quantum dot lasers and metal has a great impact on lasers′ performance.The value of contact resistance has a relationship with metal,annealing temperature and annealing time.By taking met al as Au/Ni/Au/Ge,the ohmic contact resistance of InAs/InP quantum dot laser is adju sted by changing the annealing temperature and annealing time.We find that the anneali ng time has a little influence on resistance.In contrast,the value of contact resistance decreases quickly with the increase of annealing temperature.A suitable conditi on between InAs/InP quantum dot lasers and metal is finally obtained and exhibits a resistivity of 1.34×10－6 Ω·cm^2by a transfer matrix method.At the sa me time,taking this as a processing condition,an InAs/InP quantum dot laser with its multi-mode emiss ion at a center wavelength of 1.577μm is fabricated.At room temperature,the laser has one facet power more than 39mW under continuous wave mode.