The surface metallization of Cu-Cr complexes doped high molecular pol ymer induced by infrared laser is studied in this paper.The surface modifying process was acco mplished by 1.06μm and 10.6μm infrared lasers,and the microstructure and the chemical pr operties of the modified areas are analyzed by many surface detection methods.The experimental results show that the ablation effect of the 1.064μm laser beam leads to the formation of a large number of holes, which plays the role of "anchoring" on the irradiated surface.The modified a reas after irradiation by 1.06μm laser show a periodic structure,leading to an increased surf ace adhesive force. The 1.064μm laser beam can break the chemical bonds of the Cu-Cr complexes,re sulting in the emergence of the reduction ions of Cu¹⁺ and Cr³⁺ in the modified region,and the contents of the Cu¹⁺ and Cr³⁺ ions are 0.9% and 2.8%,respectively.The average thickn ess and standard deviation of the deposited copper layer after irradiation by 1.064μm laser are 1100μm and 0.29μm,respectively.By contrast,a random fluctuated structure was formed after irradiation by 10.60μm laser beam,and the contents of Cu¹⁺ and Cr³⁺ ions are 0.4% and 1.6%,respectively.The av erage thickness and standard deviation of the deposited copper layer after irradiation by 10.6μm laser are 1.7μm and 0.59μm, respectively,and the adhesive force of the copper layer is lower than that irrad iated at 1.060μm.