Quartum dot light emitting diode (QD-LED) devices (ITO/TPD+PVK/QDs/ALq₃/LiF/A l) were prepared by spin coating and vacuum vapor deposition process using CdSe/ZnS,and the electroluminescent performance of the devic es is tested.The effects of ITO surface treatment,TPD hole transport layer and quantum dots light-emitting layer thickness on the QD-LED performance studied,and by adjusting the QDs light em itting layer and Alq_3electron transpor t layer thicknesses,the preparation can be used to realize white light QD-LED.T he experimental results show that the surface tre atment of ITO can reduce the turn-on voltage of the devices from 9V to 7V;the thicknesses of TPD hole transport layer and QDs li ght emitting layer can affect the current density and luminance of the QD-LED devices obviously,and a reasonable proportion of th e Q Ds light emitting layer and Alq_3electron transport layer may be selected to get white emitting The optimal device is prep ared when the mass ratio of TPD and PVK is 5∶1,the concentration of QDs is 1.0mg/mL ,and the thickness of Alq_3is 60nm.Luminous efficiency of the device reaches 1500cd/m^2at 15V voltage ,color coordinates are(0.3628,0.3796),a nd the color render index (CRI) is 88.1.