A tunnel concatenation uncoupled semiconductor laser with two active regions and lasing wavelength of 905nm is designed through anal yzing the active region,waveguide layer,cladding layer and tunnel junction.Devic e is epitaxially grown by metal organic chemical vapor deposition (MOCVD) method,and tunnel concatenation uncoupled semiconducto r laser is realized after lithography,etching,annealing,cleavage,welding and o ther technology.The results show that the peak wavelength is 904.4nm under pulse current of 1.2A w ithout facet coating,and the slope efficiency is 1.12W/A,which is 1.9times mor e than that of the regular laser with the same structure.There is a single peak in vertical far field, and the divergence angle is 25.8°,which demonstrates that the optical field is uncoupled.