Direct picoseconds(PS) laser writing has been used to reduce the insul ated graphene oxide (GO) films, for the preparation of conductive and patterning graphene.First,the GO films w ere prepared by spin coating method.Then PS laser direct writing was performed,which can achieve the reduct ion and pattern of GO in one step.Optical microscopy images show the colors of GO films before and after reduction change obviously.The patterns created with high resolution could be clearly identified.The deoxygena tion of the GO films by the PS laser reduction method was confirmed by using Raman spectroscopy and X-ray phot oelectron spectroscopy (XPS). In addition,the results of electrical test of the reduced and patterned grap hene oxides (RP-GO) films demonstrate the change of output power of PS laser can adjust and control the co nductivity of the RP-GO films. Large-scale production,patterning and electrical control can be resolved by dir ect PS laser writing technology,which might open the door for applications of graphene-based materials in electronic microdevices.