Mo films with multi-transverse interfaces and single-transverse inte rface are deposited on stainless steel foil using magnetron sputtering process,a nd then Cu(In,Ga)Se₂(CIGS) absorbers are deposited on Mo films with multi-transverse interfaces and single-transverse i nterface respectively. The effects of different structured Mo films on CIGS films are characterized by secondary ion mass spectroneter (SIMS),X-ray diffraction (XRD) and scanning electron microscopy (SEM).In addition,the electrical properties of CIGS solar cell with different st ructured Mo films are characterized by I-V measurements .XRD results shows that the preferred orientations of the multi-transverse inte rface Mo (M-Mo) thin film and the single-transverse Mo (S-Mo) film are (110). SEM results demonstrate that compared with S-Mo fi lm,the grain size of the M-Mo films is smaller and roughness is larger.J-V test results suggest that the open circuit voltage (V_oc),short c ircuit current J_sc and fill factor (FF) are all improved when M-Mo film is used as back contact.