Based on the principle of ultrashort laser pulse multiphoton ionizati on microscopy,copper indium-gallium diselenide (CIGS) thin films solar cell are scanned in depth dir ection by using 800nm and 50fs laser pulses with repetition rate of 1kHz at a controlled laser power of 50μW.The d ifferences among the ionization radiation signal for soda lime glass substrate only,soda lime glass coated with molybdenum film and CIGS/Mo / soda lime glass are compared and analyzed.The results show that the intensities of the laser-induced ionizat ion radiation signal for different coating materials are distinctively different,the signal intensity of soda lime is 20times larger than that of gas background,and the intensity of Mo layer is 50times larger than that of soda lime,while a vall ey corresponding to the band gap can be found for the CIGS layer,and its intensity is dropped to the level of gas background. The qual ities and properties of the thin films, the band gap of CIGS and micro-nano structure of the thin films may be studied subtly using point-by-point scanning by this method.This investigation results demonstrate that the ultrash ort laser pulse multiphoton ionization microscopy is remarkably sensitive to the changes at boundaries between differen t materials,and thus presents a unique and attractive advantage in the detection of the microscopic properties o f complex devices with multilayer structures.