InAs0.05Sb0.95 thick epilayers with long wavelength were gr own on InAs substrates using melt epitaxy (ME).ME is an improved liquid phase epitaxy (LPE) method.The cross section of InAsSb samples was observed by scanning electron microscopy (SEM).The thickness of the epilayers reaches 150μ m. This thickness effectively suppresses the influence of the lattice mism atch between the epilayers and substrates.InAsSb photodetectors with long wavelength operating at near room temperature were fabricated.The detectors are photoconduc tors with TE coolers.At 250K,the photoresponse wavelength range is 2－11μm.The peak responsivity is 153.7V/W,which has been enhanced to 1912.6V/W by installing Ge filed lens,indicating application prospects for infrared detect ion.