CVD金刚石热沉封装高功率半导体激光器的热特性
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(1.粒子输运与富集技术国防科技重点实验室,天津 300180; 2.核工业理化工程研究院, 天津 300180; 3.天津理工大学 电信工程学院,天津 300384)

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戴玮(1982-),男,天津人,博士,主要从事高功率半导 体激光器方面的研究.

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国家重点研发计划(2016YFB0402700)、中国博士后科学基金(2017M621045)和天津市企业博士后创新项目择优资助(TJQYBSH2017016)资助项目 (1.粒子输运与富集技术国防科技重点实验室,天津 300180; 2.核工业理化工程研究院, 天津 300180; 3.天津理工大学 电信工程学院,天津 300384)


Thermal performance of high power semiconductor lasers packaged on CVD diamond heatsink
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(1.Science and Technology on Particle Transport and Separation Laboratory,Tia njin 300180,China; 2.Research Institute of Physical and Chemical Engineering of Nuclear Industry,Tianjin 300180,China; 3.College of Electronic Information and E ngineering Tianjin University of Technology,Tianjin 300384,China)

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    摘要:

    本文以自支撑CVD金刚石膜作为半导体激光器 线阵的封装热沉,从而改进其热特性。首先,以电子辅助化学气相沉积(EACVD)制备自支 撑金刚石膜。在沉积工艺 中,提出了优化O2流量刻蚀非金刚石相,使金刚石膜品质得到改进,从而提高其导热率。 然后,测试了基于不同氧 流量下制备金刚石热沉封装的半导体激光器线阵的电光特性,并对封装器件的热特性进行了 分析。结果表明:通入 O2流量为每分钟5sccm时,制备的金刚石热沉导热率可达1 812.3 WK-1m-1。O2流量5sccm制备金刚石热沉的封装器件的 斜率效率为1.30 W/A,电光转换效率最大值可达 60.6%。在连续波30 A 时,该封装器件的光谱红移波长为2.02 nm,器 件工作温度降低4.9 K。器件的传热路径热阻降低28.4%,表现出优异的可靠性。

    Abstract:

    In this paper,semiconductor laser bars were packaged on self-standing CVD diamo nd films as heatsinks to improve the thermal performance of the devices.At first,the self-standing diamond films wer e prepared by electron-assisted chemical vapor deposition (EACVD).Improving the quality of diamond films by add ing O2at an optimized flow rate to etch non-diamond phase was adopted in deposition process,and thermal conductivity of diamond films was improved consequently.Then,electro-optical characteristics of semiconductor la sers packaged on different diamond heatsinks that were prepared at different O2flow rates were measured,and ther mal performance of the packaged devices was analyzed.The results show that thermal conductivity of the diamond heatsink prepared at O2flow rate of 5sccm could reach 1812.3WK-1m-1. The slope efficiency of the device is 1.30W/A,and the peak electro-optical c onversion efficiency is 60.6%. The red shift wavelength of the packaged device is 2.02n m under continuous wave of 30A,and operating temperature is reduced by 4.9K.The thermal resistance of heat transf er path of the device is reduced by 28.4%,and excellent reliability is shown.

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戴玮,李嘉强,曹剑,张志忠,张晓卫,杨保和. CVD金刚石热沉封装高功率半导体激光器的热特性[J].光电子激光,2019,30(3):227~233

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  • 收稿日期:2018-09-27
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  • 在线发布日期: 2019-04-28
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