Abstract:ZnO thin films with In doping concentr ations of 1at%,2at%,3at%,4at% and 5at% were grown on conventional glass substrates by sol-gel spin coating m e thod.X-ray diffractometer (XRD),scanning electron microscope (SEM) and ultrav i olet-visible spectrophotometer (UV-Vis) were used to characterize the grain gr ow th,structure and optical properties of the samples.The results are as follows: the prepared films all grow preferentially in the (002) direction,and with the increase of In3+ doping concentration,the peak shape and half-height wid th of the diffraction peak show a trend of first decreasing and then increasing;after In3+ doping,ZnO The film grains developed from the original hexagonal sha pe t o a worm-like shape,and the particle size became smaller and different in size; compared with the intrinsic sample,the doped ZnO light transmittance increased by 10%,and the absorption edge The short wavelength direction shifts,and with the incorporation of In3+,the optical band gap value of the film increases fro m 3.49eV to 3.80eV.When the In3+ doping concentration is 4at%,the peak s hape of the film (002) peak is the sharpest and the peak is the largest,the crystal grains are more uniform,the lattice spacing is smaller,the light transmittance is the highest,and the optical band gap value is relatively large 3.77eV.