Monolayer tungsten disulfide is a direct bandgap semiconductor with weak dielectric screening effect,high exciton binding energy and strong photoluminescence emission.The photoluminescence properties of different monolayer tungsten disulfide samples were measured and analyzed by using a home-built photoluminescence microscopic spectral imaging setup.The results show that the photoluminescence emission peak of monolayer tungsten disulfide is around 620nm.With the increase of laser power,the photoluminescence intensiti es increase and the photoluminescence emission peaks of monolayer tungsten disulfide on different substrates exhibit a clear red shift effect.The substrat e types can affect the red shift magnitude and the photoluminescence intensities.From t he analysis of the excitonic behavior,the results reveal that the peak intensity r atio of the neutral excitons to the charged excitons is substrate dependent.