A low polarization-dependent Ge/SiGe multiple quantum wells electro- absorption modulator by introducing biaxial tensile strain through suspended microbridge st ructure is fabricated on complementary-metal-oxide-semiconductor (CMOS) compatible silicon platform using ultraviolet lithography technique (UVL).The biaxial tensile strain of the fabricated device is me asured through Raman spectroscopy,and the photocurrent response,modulation extinction ratio and hig h frequency response of the device are tested under both of transverse electric (TE) and transverse m agnetic (TM) polarization.The device presents a low polarization-dependent extinction ratio of 5.8 dB under 0 V/4 V operation,together with a 3 dB modulation bandwidth of 8.3 GHz at 4 V revers e bias voltages. Compared with electron beam lithography technique (EBL),although the device fabricate d through UVL performs a little worse in modulation extincti on ratio and high frequency response bandwidth,it has the advantages of short exposure time,low cost and enabling mass production,which has broad application prospects.