Owing to its high photosensitivity and high accurate alarm rate,galliu m oxide based solar blind photodetectors attract much attention in military and civilian fields.To meet the requirements of the modern device,gallium oxide based photodetector desired to be flexible and self-powered. However,there are few reports about Ga₂O₃ self-powered flexible photodete ctors.In this work,we grew β-Ga₂O₃ nanowire on a flexible glass fiber fabric substrate and constructed an Ag/β-Ga₂O₃ Schottky junction.Thanks to the build in field,the Ag/β-Ga₂O₃ photodetector can work without an extra power.Meanwhile,the photodetector exhibited an ultra-low dark current (0 .2 pA at 0 V),a high light-to-dark ratio (~500),a fast response speed (0.46/0.41 s) and a high detectivi ty of 6.8×10⁹ Jones.The device also exhibited good mechanical properties.The results show that Ag/β-Ga₂O₃ Schottky junctions have promising applications in the field of deep-UV detectors and pro vide a new idea for the development of flexible self-powered detection technology.