基于高导热率石墨膜的GaN半桥功率器封装散热研究
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(1.中国科学院半导体研究所 光电子研究发展中心,北京 100083; 2.中国科学院大学 材料科学与光电技术学院,北京 100049)

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陈弘达(1960-),男,博士,研究员,博士生 导师,主要从事光电子与微电子集成器件、集成电路与系统方面的研究.

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Research on heat dissipation of GaN half-bridge power device package based on h igh thermal conductivity graphite film
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(1.Optoelectronics Research and Development Center,Institute of Semiconductors ,Chinese Academy of Sciences,Beijing 100083, China;2.College of Materials Science and Opto-Elect ronic Technology,University of Chinese Academy of Sciences,Beijing 100049, China )

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    摘要:

    本文针对激光雷达转镜扫描电机对调速精度、频 率和运动幅度的需求,提出了一种基于高热导率 石墨膜的GaN半桥功率器封装方案。仿真结果表明,与环氧玻璃布层压板 (FR-4)基板、FR-4基板+铜散热片、陶 瓷基板三种 散热结构相比,采用FR-4基板+导热石墨膜散热结构的GaN半桥功率器,制备 成本较低、工 艺复杂度可 控、成品质量轻、散热性能好,最高可降温32.6 ℃,散热性能可提 升29.6%。导热底部填充胶起到热耦合 作用,在石墨膜封装结构中不可或缺。换热系数可影响散热性能,在其他散热影响因素无法 再优化情况 下,可通过增加换热系数提高散热效果。本文研究结果对高频、高功率密度、小尺寸功率器件封 装热设计具有一定的参考和指导意义。

    Abstract:

    In this paper,a GaN half-bridge power device packaging scheme based on high thermal conductivity graphite film is proposed to meet the requirements of the speed reg ulation accuracy, frequency and motion amplitude of the lidar rotating mirror scanning motor.The simulation results show that,compared with the three heat dissipation structures of FR-4 substrat e,FR-4 substrate with copper heat sink,and ceramic substrate,the GaN half-bridge power device using the FR-4 substrate with thermally conductive graphite film heat dissipation structure has the chara cteristics of low preparation cost,controllable process complexity,light weight of finished prod uct and good heat dissipation performance whose maximum temperature reduction is 32.6 ℃,and heat dissipation performance can be improved by 29.6%.Thermally conductive underfill acts as the rmal coupling and is indispensable in graphite film packaging structures.The heat transfer coeffi cient can affect the heat dissipation performance.When other heat dissipation influencing factors cannot be optimized,the heat dissipation effect can be improved by increasing the heat transfer coeffici ent.The research results in this paper have certain reference and guiding significance for the th ermal design of high frequency,high power density and small size power device packaging.

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寇玉霞,张旭,袁芳,郭玉洁,常育宽,陈弘达.基于高导热率石墨膜的GaN半桥功率器封装散热研究[J].光电子激光,2022,33(12):1248~1254

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  • 收稿日期:2022-02-20
  • 最后修改日期:2022-03-25
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  • 在线发布日期: 2022-12-13
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