In this paper,the hole concentration in deep ultraviolet (DUV) light emitting diode (LED) is effectively improved by introducing hexagonal boron nitride (h-BN) structure in p-type region of LED.The quantum well region is calculated by COMSOL software.The simulation results show that:1) the hole concentration in the p-type region is increased by about an order of magnitude, and the emissivity and internal quantum efficiency (IQE) are also significantly improved after h-BN doping; 2) the hole concentration in the p-type region increases significantly with the increment of h-BN thickness; 3) as the band edge of h-BN moves upwards with respect to that of AlGaN material,this unique band gap arrangement effectively blocks electron leakage,hence,further enhances the recombination of electrons and holes in the quantum well region,and effectively improves the luminous efficiency of DVU LED.The proposed structure may shed light on the improvement of hole concentration and quantum efficiency of DVU LED.