Aiming at the current limitation that most terahertz absorbers can only possess a single narrow absorption peak and are unable to achieve dynamically tunable absorption to meet practical demands, a dynamic tunable absorber based on vanadium dioxide (VO2) and photoconductive silicon (PSi) metasurface in terahertz regime is proposed in this paper. The proposed design consists of five layers, namely the PSi patterned layer, two layers of silicon dioxide (SiO2) dielectric layers, the VO2 modulation layer and the gold (Au) metal substrate. The simulation results show that the designed absorber has the dual-band absorption property with a conductivity of 10 S/m for VO2 (?vo2) and 1.5×105 S/m for PSi (?PSi). The absorptivity (A(w)) in the dual band of 0.50-0.79 THz and 1.93-2.25 THz is over 90%, and the corresponding relative bandwidths are 44.96% and 15.31%, respectively. For ?vo2=2×105 S/m and ?PSi=1.5×105 S/m, the designed absorber exhibits a single-band absorptive characteristic in 0.96-1.63 THz with a relative bandwidth of 51.74% (A(w)>90%). The proposed design in this paper has the characteristics of wide-angle stability (60°), polarization insensitivity and dynamic tunable absorption, which has potential application value in multifunctional devices such as modulation, sensing and electromagnetic stealth.