Aiming at the current limitation that most terahertz (THz) absorbers can only possess a single narrow absorption peak and are unable to achieve dynamically tunable absorption to meet practical demands,a dynamic tunable absorber based on vanadium dioxide (VO₂) and photoconductive silicon (PSi) metasurface in THz regime is proposed in this paper.The proposed design consists of five layers,namely the PSi patterned layer,two layers of silicon dioxide (SiO₂) dielectric layers,the VO₂ modulation layer and the gold (Au) metal substrate.The simulation results show that the designed absorber has the dual-band absorptive characteristic with a conductivity of 10 S/m for VO₂ (σvo₂) and 1.5×10⁵ S/m for PSi (σPSi).The absorptivity (A(ω) in the dual-band of 0.50—0.79 THz and 1.93—2.25 THz is over 90%,and the corresponding relative bandwidths are 44.96% and 15.31%,respectively.For σvo₂=2×10⁵ S/m and σPSi=1.5×10⁵ S/m, the designed absorber exhibits a single-band absorptive characteristic in 0.96—1.63 THz with a relative bandwidth of 51.74% (A(ω)>90%).The proposed design in this paper has the characteristics of wide-angle stability (60°),polarization insensitivity and dynamic tunable wave-absorption,which has potential application value in multifunctional devices such as modulation,sensing and electromagnetic stealth.