A method is investigated to evaluate the performance of mass-produced crystalline silicon solar cells, aiming to identify the upper limit and potential for improvement in power conversion efficiency (PCE). In this method, the photoelectric parameters including short circuit current density (J_SC), first recombination current density (J₀₁), second recombination current density (J₀₂), and series resistance (R_s) are obtained through J-V measurement under irradiation and Suns-V_oc measurement. Then the double diode physical model is used with the best photoelectric parameters to calculate the upper limit and potential for improvement in device performance. This method is applied to industrially manufactured crystalline silicon solar cells with an average PCE of 22.49%. The results indicate that an attainable upper limit for PCE is 22.90%. Sequential optimization of J_SC, J₀₁, J₀₂ and R_s leads to an absolute improvement in average PCE of mass-produced crystalline silicon solar cells by 0.09%, 0.09%, 0.11%, and 0.14% respectively. This method can provide a guidance for optimizing the performance of mass-produced crystalline silicon solar cells.