GaN with a wide band gap,high quantum efficiency,excellent thermal stability,and radiation resistance is important role in high frequency,high power electronics,and UV photoelectron devices.In this study,we present a novel approach by utilizing high-energy Nplasma as the Nsource for synthesizing the GaN films with higher crystalline quality.This process occurs at a relatively low temperature of 850 °C,utilizing the economical and eco-friendly plasma-enhanced chemical vapor deposition (PECVD) method.Furthermore,the effects of N₂ flux on the crystalline quality of the films, growth rate and optical characteristics are investigated.The results reveal that an increase in N₂ flux enhances both the film growth rate and crystalline quality by boosting the kinetic energy of reacting atoms.Nevertheless,a further increase in N₂ flux results in excessive nucleation rate,preventing atoms adsorbed on the substrate from migrating to appropriate positions.Consequently,the films grow in random directions,leading to a decline in crystalline quality.The GaN films prepared in this study achieve a carrier concentration of 2.19×10¹⁸ cm-3 and mobility of 5.17 cm²·V-1·s-1,demonstrating significant potential for optoelectronic device applications.